Wiesław Jakubas
Czasopismo Techniczne, Elektrotechnika Zeszyt 1-E (2) 2016, 2016, s. 113-122
https://doi.org/10.4467/2353737XCT.16.033.5295As new power transistors, such as SiC Mosfets, are being increasingly used in power electro- nics systems, it has become necessary to use special drivers. This article compares the parame- ters of SiC Mosfet, Si Mosfet, and IGBT gate circuits. Differences are discussed with reference to the ways in which these transistors are controlled. Gate circuit parameters of SiC transistors differ slightly from those of common Mosfet or IGBT transistors, and in order to be able to fully utilise the capabilities of these new devices, it is necessary to employ appropriate drivers. This article discusses one such driver for SiC transistors.
Wiesław Jakubas
Czasopismo Techniczne, Elektrotechnika Zeszyt 2-E 2016, 2016, s. 161-172
https://doi.org/10.4467/2353737XCT.16.255.6054The article is about a range of issues concerning the possible use of track circuits, consisting of rail lines and impedance bonds for continuously monitoring traffic parameters of a rail vehicle moving within a separated track section. The solution to this problem may be useful in many applications and various types of rail traffic control systems that use track circuits as a source of information about the track block occupancy. One possible application may be in automatic railway crossing signalling systems (ARCS) for approach sections. In that application, the carried out measurement of the position and speed of a rail vehicle allows to determine a pre-warning time for the railway crossing.