TY - JOUR
TI - Gate driver for SiC Mosfet transistors
AU - Mysiński, Wojciech
AU - Jakubas, Wiesław
TI - Gate driver for SiC Mosfet transistors
AB - 
	As new power transistors, such as SiC Mosfets, are being increasingly used in power electro- nics systems, it has become necessary to use special drivers. This article compares the parame- ters of SiC Mosfet, Si Mosfet, and IGBT gate circuits. Differences are discussed with reference to the ways in which these transistors are controlled. Gate circuit parameters of SiC transistors differ slightly from those of common Mosfet or IGBT transistors, and in order to be able to fully utilise the capabilities of these new devices, it is necessary to employ appropriate drivers. This article discusses one such driver for SiC transistors.
VL - 2016
IS - Elektrotechnika Zeszyt 1-E (2) 2016
PY - 2016
SN - 0011-4561
C1 - 2353-737X
SP - 113
EP - 122
DO - 10.4467/2353737XCT.16.033.5295
UR - https://ejournals.eu/czasopismo/czasopismo-techniczne/artykul/gate-driver-for-sic-mosfet-transistors
KW - SiC Mosfet
KW - gate driver