TY - JOUR
TI - Analysis of the use of transistors
	based on SiC technology in inverters in the context of electromagnetic compatibility
AU - Czuchra, Wojciech
AU - Mysiński, Wojciech
AU - Woszczyna, Bartosz
TI - Analysis of the use of transistors
	based on SiC technology in inverters in the context of electromagnetic compatibility
AB - 
	Currently, manufacturers of power-electronic components are trying to introduce the silicon carbide (SiC) technology in their products and MOSFET transistors made with this technology are available on the market. They are characterised by a significantly higher operating frequency, reaching even 100 kHz and low switching losses. The application of this type of devices causes high voltage gradients at the inverter output, which can lead to increased inverter electromagnetic disturbances. This article presents test results and a high-frequency analysis, allowing for a preliminary evaluation of the use of SiC transistors in inverters in the context of electromagnetic compatibility.
VL - 2016
IS - Elektrotechnika Zeszyt 1-E (2) 2016
PY - 2016
SN - 0011-4561
C1 - 2353-737X
SP - 33
EP - 43
DO - 10.4467/2353737XCT.16.027.5289
UR - https://ejournals.eu/czasopismo/czasopismo-techniczne/artykul/analysis-of-the-use-of-transistors-based-on-sic-technology-in-inverters-in-the-context-of-electromagnetic-compatibility
KW - power electronics
KW - transistors SiC electromagnetic compatibility